Fabrication of GaN/AlGaN 1D photonic crystals designed for nonlinear optical applications
| Autor: | Vittorianna Tasco, Fabio Antonio Bovino, A. Passaseo, A. Campa, Concita Sibilia, Tiziana Stomeo, Maria Cristina Larciprete, Alessandro Massaro, G. Epifani, M. Braccini, M. De Vittorio, Iolena Tarantini |
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| Přispěvatelé: | T., Stomeo, G., Epifani, V., Tasco, A., Massaro, I., Tarantini, A., Campa, DE VITTORIO, Massimo, A., Passaseo, M., Braccini, M. C., Larciprete, C., Sibilia, F. A., Bovino |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Bragg's law Heterojunction Gallium nitride deep-etching electron beam lithography nitride compounds nonlinear optics photonic crystals chemistry.chemical_compound Optics Resist chemistry Etching (microfabrication) Metalorganic vapour phase epitaxy business Electron-beam lithography Photonic crystal |
| Zdroj: | Photonic Crystal Materials and Devices IX, Brussels, 12-15/04/2010 info:cnr-pdr/source/autori:Stomeo T; Epifani G; Tasco V; Massaro A; Tarantini I; Campa A; De Vittorio M; Passaseo A; Braccini M; Larciprete MC; Sibilia C; Bovino FA/congresso_nome:Photonic Crystal Materials and Devices IX/congresso_luogo:Brussels/congresso_data:12-15%2F04%2F2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.854470 |
| Popis: | In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two AlGaN/GaN Distributed Bragg Reflectors on sapphire substrate, designed to generate a λ= 800 nm frequency downconverted signal (χ(2) effect) from an incident pump signal at λ= 400 nm. The heterostructure was epitaxially grown by metal organic chemical vapour deposition (MOCVD) and integrates a properly designed 1D-PhC grating, which amplifies the signal by exploiting the double effect of cavity resonance and non linear GaN enhancement. The integrated 1D-PhC microcavity was fabricate combing a high resolution e-beam writing with a deep etching technique. For the pattern transfer we used ~ 170 nm layer Cr metal etch mask obtained by means of high quality lift-off technique based on the use of bi-layer resist (PMMA/MMA). At the same time, plasma conditions have been optimized in order to achieve deeply etched structures (depth over 1 micron) with a good verticality of the sidewalls (very close to 90°). Gratings with well controlled sizes (periods of 150 nm, 230 nm and 400 nm respectively) were achieved after the pattern is transferred to the GaN/AlGaN heterostructure. javascript |
| Databáze: | OpenAIRE |
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