Subsurface Oxidation for Micropatterning Silicon (SOMS)
| Autor: | Robert C. Davis, Ken Sautter, Matthew R. Linford, Feng Zhang |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Silicon
Chemistry Mordançage Scanning electron microscope Oxide chemistry.chemical_element Nanotechnology Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics law.invention chemistry.chemical_compound Chemical engineering Optical microscope Etching (microfabrication) law Electrochemistry General Materials Science Spectroscopy Micropatterning |
| Zdroj: | Langmuir. 25:1289-1291 |
| ISSN: | 1520-5827 0743-7463 |
| DOI: | 10.1021/la803408x |
| Popis: | Here we present a straightforward patterning technique for silicon: subsurface oxidation for micropatterning silicon (SOMS). In this method, a stencil mask is placed above a silicon surface. Radio-frequency plasma oxidation of the substrate creates a pattern of thicker oxide in the exposed regions. Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon, respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy. The oxidation process itself is studied under a variety of reaction conditions, including higher and lower oxygen pressures (2 and 0.5 Torr), a variety of powers (50-400 W), different times and as a function of reagent purity (99.5 or 99.994% oxygen). SOMS can be easily executed in any normal chemistry laboratory with a plasma generator. Because of its simplicity, it may have industrial viability. |
| Databáze: | OpenAIRE |
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