| Popis: |
A new method to obtain self-assembled GaAs quantum dots is presented. In this method, one monolayer (ML) of Si is pseudomorphically grown on an AlGaAs layer by molecular beam epitaxy. The subsequent GaAs overgrowth proceeds in a three dimensional (3D) mode on the pseudomorphic Si layer. For a GaAs growth equivalent to 2 ML, the self-assembled 3D islands presented an average height of 1.5 nm, with an average lateral size of 20 nm, and a density in the order of 1×1011/cm2. The transition to 3D GaAs growth strongly depends on the Si interlayer thickness. |
