Post Si(C)N hillock nucleation and growth in IC copper lines controlled by diffusional creep
| Autor: | L. Dumas, J.-C. Giraudin, A. Timma, P. Normandon, P. Caubet, B. Kaouache, Bernard Chenevier, Olivier Thomas |
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| Přispěvatelé: | Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Pierre et Marie Curie - Paris 6 (UPMC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics 020209 energy Diffusion Copper interconnect Nucleation Mineralogy chemistry.chemical_element 02 engineering and technology [CHIM.MATE]Chemical Sciences/Material chemistry Condensed Matter Physics 01 natural sciences Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Grain boundary diffusion coefficient Electrical and Electronic Engineering Electroplating Line (formation) Hillock |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2010, 87 (3), pp.361-364. ⟨10.1016/j.mee.2009.08.003⟩ Microelectronic Engineering, 2010, 87 (3), pp.361-364. ⟨10.1016/j.mee.2009.08.003⟩ |
| ISSN: | 0167-9317 1873-5568 |
| Popis: | International audience; Post Si(C)N hillocks are characterized on Cu interconnects networks. Each network is compounded by standard damascene process electroplated Cu lines with given width and local line density. AFM results show that total volume per area of post Si(C)N hillocks both on narrow and large lines increases linearly with local Cu line density. Two trends of hillocks nucleation and growth are highlighted depending on line width. For line widths inferior to 4 pun, hillocks are located at the line edge. As line density increases, the number of hillocks remains constant but their mean volume proportionally increases. For wider lines, hillocks preferentially nucleate at the center of the line. The number of hillocks proportionally increases as line density increases, but hillock mean volume remains constant. Post Si(C)N hillocks density is found to be proportional to post CMP Cu grain surface boundary density before capping. It is proposed that hillocks growth could be controlled by Cu/Ta interface diffusion on narrowest lines and by grain boundary diffusion on wider ones. (C) 2009 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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