A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction
| Autor: | Sarthak Sharma, Hao Gao, Gernot Hueber, Andrea Mazzanti |
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| Přispěvatelé: | Integrated Circuits |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Zdroj: | 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 12-13 STARTPAGE=12;ENDPAGE=13;TITLE=2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) |
| Popis: | This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset. |
| Databáze: | OpenAIRE |
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