Characterization of (In1-xAlx)(2)S-3 thin films grown by co-evaporation
| Autor: | C. Guillot-Deudon, F. Couzinie-Devy, J. Kessler, Ludovic Arzel, Sylvie Harel, A. Lafond, Nicolas Barreau |
|---|---|
| Přispěvatelé: | Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut de Chimie et Biochimie Moléculaires et Supramoléculaires (ICBMS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-École Supérieure Chimie Physique Électronique de Lyon-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Sulfide Band gap Chemistry Analytical chemistry Evaporation chemistry.chemical_element Mineralogy 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Amorphous solid Inorganic Chemistry X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Crystallite Thin film 0210 nano-technology Indium |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2010, 312 (4), pp.502. ⟨10.1016/j.jcrysgro.2009.11.057⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2009.11.057⟩ |
| Popis: | International audience; In this paper, it is shown that (In1-xAlx)(2)S-3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2 eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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