Highly stable low noise/high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz
| Autor: | Riccardo Silvestri, Nathalie Rolland, B. Grimbert, Damien Ducatteau, Enrico Zanoni, Gaudenzio Meneghesso, Y. Tagro, Matteo Meneghini, Farid Medjdoub |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Double Heterostructure
Materials science Silicon chemistry.chemical_element 02 engineering and technology Substrate (electronics) High-electron-mobility transistor Double heterostructure 01 natural sciences 7. Clean energy Noise (electronics) Reliability (semiconductor) High electron mobility transistors 0103 physical sciences Hardware_INTEGRATEDCIRCUITS HEMT 010302 applied physics business.industry Amplifier Wide-bandgap semiconductor Reliability 021001 nanoscience & nanotechnology Gallium Nitride chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Proceedings of 2013 IEEE International Reliability Physics Symposium, IRPS 2013 IEEE International Reliability Physics Symposium, IRPS 2013 IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩ |
| Popis: | In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and noise performances at 40 GHz, paving the way for high performance mmW cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time. |
| Databáze: | OpenAIRE |
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