Correlation of Stress in Silicon Nitride Layers with their Complete Removal by Laser Ablation

Autor:	Sibylle Ohl, Barbara Terheiden, Josh Engelhardt, Giso Hahn
Rok vydání:	2013
Předmět:	Laser ablation Materials science Passivation business.industry Analytical chemistry Dielectric Laser ablation law.invention laser chemistry.chemical_compound stress silicon nitride Silicon nitride chemistry Energy(all) law Plating Screen printing Solar cell Optoelectronics ddc:530 business
Zdroj:	Energy Procedia. 38:707-712
ISSN:	1876-6102
DOI:	10.1016/j.egypro.2013.07.336
Popis:	In recent years laser ablation of dielectric layers for local structuring of solar cell passivation layers has become more and more common. Apart from adjusting laser parameters for a damage-free removal of dielectric layers, it is necessary to prepare the surface in a way suitable for the respective contact methods (screen printing, nickel plating, etc.). In this study, we demonstrate for silicon nitride layers how the deposition parameters and deposition method correlate to the characteristics of the ablated area. Furthermore a simple method to predict these characteristics is introduced based on the determination of the intrinsic stress in the dielectric layer. A correlation between compressively stressed or stress-free silicon nitride layers and a complete ablation was found.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdbd693b2706d1d5fd6dac5a9531f0c7 Zobrazit plný text záznamu