High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies
Autor: | Christophe Vallée, F. El Kamel, Patrice Gonon, Corentin Jorel, Vincent Jousseaume, M. Mougenot |
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Přispěvatelé: | Clot, Marielle, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), électronique, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS) |
Rok vydání: | 2009 |
Předmět: |
Materials science
business.industry chemistry.chemical_element Condensed Matter Physics Oxygen Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory law.invention Capacitor chemistry law Metallic electrode Electrode Optoelectronics Work function [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering business Tin ComputingMilieux_MISCELLANEOUS |
Zdroj: | Microelectronic Engineering Microelectronic Engineering, 2009, 86 (7-9), pp.1774. ⟨10.1016/j.mee.2009.03.001⟩ Microelectronic Engineering, Elsevier, 2009, pp.86,1774 (09) |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2009.03.001 |
Popis: | International audience; Influence of metallic electrode and oxygen vacancies in MIM capacitors and MIM RRAM high κ based devices is studied. For both MIM capacitors and MIM RRAM it is shown that the electrode composition strongly influences the overall behavior of the devices and more precisely, the capacitance–voltage curve (nonlinearities) for MIM capacitors, and the switching mechanism (SET/RESET) for MIM RRAM. Best results for HfO2 RRAM are obtained with Pt as bottom electrode instead of TiN while very low capacitance variations are observed for high work function electrodes, or more precisely electrodes with low oxygen affinity. These evolutions are related to the oxygen vacancies concentration and migration to the cathode electrode/high κ interface. |
Databáze: | OpenAIRE |
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