Deep Level Defects in 4H-SiC Epitaxial Layers
| Autor: | Vadimir Radulović, José Coutinho, Ivana Capan, Takeshi Ohshima, Luka Snoj, Takahiro Makino, Tomislav Brodar, Željko Pastuović, Kamel Demmouche, Rainer Siegele, Vitor J.B. Torres, Shin-ichiro Sato |
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| Rok vydání: | 2018 |
| Předmět: |
4H-SiC
deep level defects neutrons ion implantation DLTS carbon vacancy Materials science Deep level business.industry Physics Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Condensed Matter::Materials Science NATURAL SCIENCES Ion implantation Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science 010306 general physics 0210 nano-technology business |
| Zdroj: | Materials Science Forum |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.225 |
| Popis: | We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+and 2 MeV He++ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1and Z2to emissions from double negatively charged carbon vacancies located at theh- andk-sites, respectively. |
| Databáze: | OpenAIRE |
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