Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions
| Autor: | Shigehiko Hasegawa, Jesus A. del Alamo, A.A. Villanueva, Yoichi Nogami, Hajime Sasaki, Takayuki Hisaka, Naohito Yoshida, Kenji Hosogi, Hajime Asahi |
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| Přispěvatelé: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, del Alamo, Jesus A., Villanueva, Anita A. |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Passivation business.industry Transistor Electrical engineering Activation energy High-electron-mobility transistor Condensed Matter Physics equipment and supplies Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Corrosion law.invention Semiconductor law Optoelectronics Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality business Deposition (law) |
| Zdroj: | del Alamo via Amy Stout |
| Popis: | We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity with bias consists of a decrease in maximum drain current (Imax) caused by a corrosion reaction at the semiconductor surface at the drain side. The decrease in Imax is markedly accelerated by the external gate–drain bias (Vdg). This originates from a reduction in the actual activation energy (Ea0) by Vdg. The degradation depends on the surface treatment prior to deposition of the SiNx passivation film. The reduction of As-oxide at the SiNx/semiconductor interface suppresses the corrosion reaction. |
| Databáze: | OpenAIRE |
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