Single quantum dot-in-a-rod embedded in a photonic nanowire waveguide for telecom band emission
| Autor: | S. Haffouz, L. Ginet, Khaled Mnaymneh, D. Dalacu, Robin L. Williams, Philip J. Poole, J. Jin, Xiaohua Wu |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Quantum optics Materials science Physics and Astronomy (miscellaneous) business.industry Band gap Nanowire Physics::Optics 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Aspect ratio (image) Waveguide (optics) Condensed Matter::Materials Science Quantum dot 0103 physical sciences Light emission Photonics 0210 nano-technology business Telecommunications |
| Zdroj: | Applied Physics Letters. 117:113102 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Bright emission from non-classical light sources is a key requirement for their practical use in quantum optics. In this Letter, we report on an alternative approach to realize high-brightness nanowire emitters in the telecom band. We discuss the growth and optical properties of a single InA s 0.68 P 0.32 quantum dot in an InA s 0.50 P 0.50 quantum rod, all embedded in an InP nanowire waveguide. Modifying the bandgap energy of the matrix surrounding the quantum dot by inserting it into an InA s 0.50 P 0.50 quantum rod, instead of InP, reduces the barrier height for carriers in the dot. As a result, light emission at λ = 1310 nm is reached from an InA s 0.68 P 0.32 dot grown with the same deposition conditions as that used for λ = 950 nm emission in the conventional structure. We demonstrate that the dot-in-a-rod (DROD) configuration increases (up to fivefold) the emission rate of the emitters at 1310–1550 nm as compared to those grown with the higher dot aspect ratio required when not using the DROD structure. Carrier generation localized to the dot (quasi-resonant scheme) is achieved by optically pumping the rod below the InP bandgap. |
| Databáze: | OpenAIRE |
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