Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology
| Autor: | Valerie Serradeil, Mathieu Lisart, Olivier Gagliano, Alexandre Sarafianos, Assia Tria, J-M. Dutertre |
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| Přispěvatelé: | STMicroelectronics [Tours] (ST-TOURS), Département Systèmes et Architectures Sécurisés (SAS-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC, Laboratoire Systèmes et Architectures Sécurisés (LSAS), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC-École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC-CEA Tech en régions (CEA-TECH-Reg), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Materials science business.industry Photoconductivity NMOS electrical model 02 engineering and technology Photoelectric effect Laser 01 natural sciences 020202 computer hardware & architecture Semiconductor laser theory law.invention Thermal laser stimulation law laser induced photocurrent 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics Laser power scaling [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business NMOS logic |
| Zdroj: | International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), Apr 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6532028⟩ |
| DOI: | 10.1109/irps.2013.6532028 |
| Popis: | International audience; This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements. |
| Databáze: | OpenAIRE |
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