TiO2 thin film transistor by atomic layer deposition
| Autor: | Levent E. Aygun, Furkan Cimen, Feyza B. Oruc, Ali Kemal Okyay |
|---|---|
| Přispěvatelé: | Okyay, Ali Kemal |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Anatase
Materials science Annealing (metallurgy) Atomic layer deposition Post annealing Amorphous materials Absorption mechanisms Ultraviolet region Polycrystalline Thin film Subthreshold slope Deposition Titanium Dioxide Oxide minerals Optical response business.industry Thin film transistors Transparent electronics Threshold voltage Amorphous solid Thin-film transistor Optoelectronics Channel materials business Amorphous films |
| Zdroj: | Proceedings of SPIE |
| Popis: | Date of Conference: 3–6 February 2013 Conference name: Proceedings of SPIE, Oxide-based Materials and Devices IV In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE. |
| Databáze: | OpenAIRE |
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