Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
| Autor: | Keisuke Uemura, Masachika Toguchi, Taketomo Sato, Yuto Komatsu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
0209 industrial biotechnology
Materials science Gallium nitride 02 engineering and technology Industrial and Manufacturing Engineering law.invention Pins chemistry.chemical_compound photo-electrochemical reactions 020901 industrial engineering & automation Etching (microfabrication) law Electrical and Electronic Engineering HEMTs business.industry Transistor Wide-bandgap semiconductor MODFETs Heterojunction Aluminum gallium nitride low damage etching Wide band gap semiconductors Condensed Matter Physics GaN heterostructures Electronic Optical and Magnetic Materials Threshold voltage Etching chemistry AlGaN Optoelectronics business Layer (electronics) Voltage |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 32:483-488 |
| ISSN: | 1558-2345 0894-6507 |
| Popis: | This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC etching on AlGaN/GaN heterostructures to produce smooth and flat surfaces. Self-termination phenomena observed under optimal PEC condition were useful for precisely controlling the etching depth in the AlGaN layer. Two types of HEMTs, i.e., Schottky-gate and metal-insulator-semiconductor (MIS)-gate, were fabricated. A recessed-gate AlGaN/GaN structure fabricated with PEC etching showed positive threshold voltage, and its variation was very small with a standard deviation of only 0.019 V for the Schottky-gate HEMTs and 0.032 V for the MIS-gate HEMTs. A recessed-gate structure with PEC etching showed better current transport controllability with a small subthreshold-slope than that of planar-gate and dry-etched-gate AlGaN/GaN structures. |
| Databáze: | OpenAIRE |
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