Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In–Zn–O Film
| Autor: | Hyun-Mi Kim, Hyerin Lee, Sangbong Lee, Tae-Sik Yoon, Min-Sik Kim, Ki-Bum Kim, Minsu Kim, Yeong-Ho Cho, Yun-Ho Kang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Period (periodic table) Bilayer 02 engineering and technology 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Amorphous solid Atomic layer deposition Chemical engineering 0103 physical sciences General Materials Science 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 12:39372-39380 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c07540 |
| Popis: | This study reports on the effect of a bilayer period on the growth behavior, microstructure evolution, and electrical properties of atomic layer deposition (ALD) deposited In-Zn-O (IZO) films, fixing the ALD cycle ratio of In-O/Zn-O as 9:1. Here, the bilayer period is defined as the total number of ALD cycles in one supercycle of In-O and Zn-O by alternately stacking Zn-O and In-O layers at a temperature of 220 °C. IZO films with a bilayer period from 10 to 40 cycles, namely, IZO[In-O/Zn-O = 9:1] to IZO[36:4], result to form an amorphous phase with a resistivity of 4.94 × 10 |
| Databáze: | OpenAIRE |
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