Measurement of the electron ionization coefficient at low electric fields in InGaAs‐based heterojunction bipolar transistors

Autor:	Andrea Neviani, C. Forzan, Federico Capasso, Claudio Canali, S. Chandrasekhar, L. Vendrame, R. J. Malik, R. A. Hamm, Enrico Zanoni
Rok vydání:	1995
Předmět:	Physics and Astronomy (miscellaneous) Field (physics) Heterostructure-emitter bipolar transistor business.industry Chemistry Heterojunction bipolar transistor Bipolar junction transistor Heterojunction Electron impact ionization Ionization Electric field Optoelectronics Atomic physics business
Zdroj:	Applied Physics Letters. 66:1095-1097
ISSN:	1077-3118 0003-6951
Popis:	The behavior of the electron impact‐ionization coefficient αn in In0.53Ga0.47As is measured with unprecedented sensitivity down to very low electric fields. The data are derived from measurements of the multiplication coefficient M−1 in suitably designed heterojunction bipolar transistors. Previously available data are extended by two orders of magnitude in the low field domain, down to αn≊1 cm−1. The experimental behavior of αn at fields below 200 kV/cm is in agreement with the theoretical prediction of a weak field dependence of αn at low electric fields.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc0264da9f704c9cea6af45371b4e450 https://doi.org/10.1063/1.113583 Zobrazit plný text záznamu