Electrical and physical topography in energy-filtered photoelectron emission microscopy of two-dimensional silicon pn junctions
| Autor: | Olivier Renault, Denis Mariolle, M. Escher, Maylis Lavayssière, Nicholas Barrett |
|---|---|
| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), FOCUS GmbH, FOCUS, Laboratoire d'Etude des NanoStructures et Imagerie de Surface (LENSIS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, ANR-13-RTBB-0001,ANR RTB2013 2013,ANR RTB2013 2013(2013) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Simulations
Materials science Silicon Aperture chemistry.chemical_element 02 engineering and technology Electron 01 natural sciences Optics Distortion Electric field 0103 physical sciences Physical and Theoretical Chemistry Spectroscopy 010302 applied physics [PHYS]Physics [physics] Radiation business.industry Surface imaging 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Cardinal point Semiconductor chemistry Pn junction Photoelectron emission microscopy 0210 nano-technology business p–n junction |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena Journal of Electron Spectroscopy and Related Phenomena, Elsevier, 2013, 186, pp.30-38. ⟨10.1016/j.elspec.2013.01.014⟩ Journal of Electron Spectroscopy and Related Phenomena, 2013, 186, pp.30-38. ⟨10.1016/j.elspec.2013.01.014⟩ |
| ISSN: | 0368-2048 |
| Popis: | International audience; Photoelectron emission microscopy (PEEM) is a powerful non-destructive tool for spatially resolved, spectroscopic analysis of surfaces with sub-micron chemical heterogeneities. However, in the case of micron scale patterned semiconductors, band line-ups at pn junctions have a built-in lateral electric field which can significantly alter the PEEM image of the structure with respect to its physical dimensions. Furthermore, real surfaces may also have physical topography which can reinforce or counteract the electrically induced distortion at a pn junction. We have measured the experimental PEEM image distortion at such a junction and carried out numerical simulations of the PEEM images. The simulations include energy filtering and the use of a contrast aperture in the back focal plane in order to describe the changes in the PEEM image of the junction with respect to its real physical dimensions. Threshold imaging does not give a reliable measurement of micron sized p and n type patterns. At higher take-off energies, for example using Si 2p electrons, the pattern width is closer to the real physical size. Physical topography must also be quantitatively accounted for. The results can be generalized to PEEM imaging of any structure with a built-in lateral electric field. |
| Databáze: | OpenAIRE |
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