Mobility model based on piezoresistance coefficients for Ge 3D transistor
| Autor: | Kuan-Ting Chen, Yun-Fang Chung, Min-Hsin Hsieh, Ren-Yu He, Shu-Tong Chang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Mobility model Electron mobility Materials science business.industry Transistor lcsh:Electronics lcsh:TK7800-8360 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Fin (extended surface) Stress (mechanics) Nonlinear system CMOS law 0103 physical sciences Optoelectronics Field-effect transistor lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business lcsh:TK1-9971 |
| Zdroj: | Solid State Electronics Letters, Vol 1, Iss 2, Pp 92-97 (2019) |
| ISSN: | 2589-2088 |
| Popis: | The conventional first order piezoresistance model has commonly been used to describe carrier mobility enhancement for low levels of process induced stress in Complementary Metal-Oxide-Semiconductor Field Effect Transistor (CMOS) technology. However, many reports show it failing to describe the nonlinear behavior observed at high levels of stress. In this paper, mobility model based on the modified piezoresistance model with nine stress-independent piezoresistance coefficients is proposed such that a mobility model can be applied correctly to calculate the strain-induced carrier mobility changes. Hence, the overall accuracy is improved compared to the conventional piezoresistance (PR) model. Its validation is confirmed with the results from TCAD simulations of carrier mobility for Ge Fin Field Effect Transistors (FinFET) and nanowire transistors. Keywords: Mobility, Piezoresistance model, Ge, Stress, FinFET |
| Databáze: | OpenAIRE |
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