Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence
| Autor: | Xia Zhuge, Fei Zhuge, Jingrui Wang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Artificial intelligence
Computer science 306 Thin film / Coatings 02 engineering and technology Memristor Composite Materials for Functional Electronic Devices 010402 general chemistry 01 natural sciences law.invention symbols.namesake law General Materials Science Materials of engineering and construction. Mechanics of materials memristor hybrid oxide brain-inspired neuromorphic computing business.industry Deep learning 40 Optical magnetic and electronic device materials 021001 nanoscience & nanotechnology 0104 chemical sciences 201 Electronics / Semiconductor / TCOs Neuromorphic engineering symbols TA401-492 artificial synapse 0210 nano-technology business TP248.13-248.65 Von Neumann architecture Biotechnology Research Article |
| Zdroj: | Science and Technology of Advanced Materials article-version (VoR) Version of Record Science and Technology of Advanced Materials, Vol 22, Iss 1, Pp 326-344 (2021) |
| ISSN: | 1878-5514 1468-6996 |
| Popis: | The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an enormous amount of energy and time consumed in the data transfer process. Inspired by the human brain acting like an ultra-highly efficient biological computer, neuromorphic computing is proposed as a technology for hardware implementation of artificial intelligence. Artificial synapses are the main component of a neuromorphic computing architecture. Memristors are considered to be a relatively ideal candidate for artificial synapse applications due to their high scalability and low power consumption. Oxides are most widely used in memristors due to the ease of fabrication and high compatibility with complementary metal-oxide-semiconductor processes. However, oxide memristors suffer from unsatisfactory stability and reliability. Oxide-based hybrid structures can effectively improve the device stability and reliability, therefore providing a promising prospect for the application of oxide memristors to neuromorphic computing. This work reviews the recent advances in the development of hybrid oxide memristive synapses. The discussion is organized according to the blending schemes as well as the working mechanisms of hybrid oxide memristors. Graphical abstract |
| Databáze: | OpenAIRE |
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