Autor: |
Valentina Spampinato, Alexis Franquet, Danilo De Simone, Ivan Pollentier, Alexander Pirkl, Hironori Oka, Paul van der Heide |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Analytical chemistry. 94(5) |
ISSN: |
1520-6882 |
Popis: |
This study reports on the application of secondary ion mass spectrometry (SIMS) for examining thin (20-50 nm) chemically amplified resist films on silicon. SIMS depth profiling was carried out using a gas cluster ion beam to ensure minimal sputter-induced damage to the organic constituents of interest. Specific attention concerned the distribution of the photo acid generator (PAG) molecule within these films, along with the photo-induced fragmentation occurring on extreme ultra-violet photo exposure. Positive secondary ion spectra were collected using a traditional time of flight (ToF)-SIMS and the latest generation IONTOF Hybrid SIMS instrumentation equipped with an Orbitrap |
Databáze: |
OpenAIRE |
Externí odkaz: |
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