Photoluminescence of phosphorus atomic layer doped Ge grown on Si
| Autor: | Yuji Yamamoto, Bernd Tillack, Markus Andreas Schubert, Winfried Seifert, Anne Hesse, Roger Loo, Giordano Scappucci, Giovanni Capellini, D. Sabbagh, Thomas Schroeder, Michele Virgilio, Junichi Murota, Ioan Costina, Li-Wei Nien, Ashwyn Srinivasan |
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| Přispěvatelé: | Yamamoto, Yuji, Nien, Li wei, Capellini, Giovanni, Virgilio, Michele, Costina, Ioan, Schubert, Markus Andrea, Seifert, Winfried, Srinivasan, Ashwyn, Loo, Roger, Scappucci, Giordano, Sabbagh, Diego, Hesse, Anne, Murota, Junichi, Schroeder, Thoma, Tillack, Bernd |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials Chemistry2506 Metals and Alloys
Materials science Photoluminescence Annealing (metallurgy) atomic layer doping chemical vapor deposition epitaxy gemanium phosporus photoluminescence Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Inorganic chemistry Analytical chemistry phosporu 02 engineering and technology Chemical vapor deposition Condensed Matter Physic Epitaxy 01 natural sciences Crystallinity 0103 physical sciences Materials Chemistry Electronic Optical and Magnetic Materials 010302 applied physics Materials Chemistry2506 Metals and Alloy Electronic Optical and Magnetic Material Doping 021001 nanoscience & nanotechnology Crystallographic defect 0210 nano-technology Luminescence |
| Popis: | Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 Ã1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 à 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 à 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by â¼0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of â¼2 à 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration. |
| Databáze: | OpenAIRE |
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