Combining inkjet printing and chemical vapor deposition for fabricating low voltage, organic field-effect transistors on flexible substrates
| Autor: | Alessandra Zucca, Alberto Loi, Stefano Lai, Piero Cosseddu, Annalisa Bonfiglio |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Fabrication Large area processing Nano-sized dielectrics Nanotechnology 02 engineering and technology Substrate (printing) Chemical vapor deposition 01 natural sciences law.invention law 0103 physical sciences Materials Chemistry Hardware_INTEGRATEDCIRCUITS 010302 applied physics Organic field-effect transistor Transistor Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Inkjet printing Printed electronics Field-effect transistor OFET 0210 nano-technology Low voltage |
| Zdroj: | Thin solid films 631 (2017): 124–131. doi:10.1016/j.tsf.2017.04.021 info:cnr-pdr/source/autori:Lai S.; Cosseddu P.; Zucca A.; Loi A.; Bonfiglio A./titolo:Combining inkjet printing and chemical vapor deposition for fabricating low voltage, organic field-effect transistors on flexible substrates/doi:10.1016%2Fj.tsf.2017.04.021/rivista:Thin solid films (Print)/anno:2017/pagina_da:124/pagina_a:131/intervallo_pagine:124–131/volume:631 |
| DOI: | 10.1016/j.tsf.2017.04.021 |
| Popis: | A highly reliable fabrication process of low voltage organic field-effect transistors on plastic substrates by means of large area techniques is here reported. The proposed approach is based on the combination of two large-area techniques, inkjet printing and chemical vapor deposition for the fabrication of a thin dielectric layer. A printing process has been employed also for the fabrication of source and drain electrodes and for the organic active layer. The thorough optimization of the fabrication process allows obtaining transistors operated at voltages below 5 V. A morphological characterization is provided in order to demonstrate the effectiveness of the fabrication process and to quantify the impact of the device optimization in its final feasibility. Moreover, an analysis of a statistically relevant set of devices is reported to demonstrate the reproducibility of device performances. Bias and mechanical stress tests are provided to demonstrate the stability of the device performances during continuous polarization and for significant mechanical deformations of the substrate. |
| Databáze: | OpenAIRE |
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