Effects of hydrogen implantation temperature on InP surface blistering
| Autor: | N. David Theodore, S. S. Lau, Maria Grazia Grimaldi, Zengfeng Di, Peng Chen, Michael Nastasi, Elena Bruno |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
DAMAGE
Materials science Physics and Astronomy (miscellaneous) Hydrogen Quantitative Biology::Tissues and Organs Nucleation chemistry.chemical_element Crystal growth Rutherford backscattering spectrometry Exfoliation joint Crystallographic defect SEMICONDUCTORS Elastic recoil detection Crystallography Ion implantation chemistry Physics::Atomic Physics Composite material SILICON |
| Zdroj: | Applied physics letters 92 (2008): 202107-1–202107-3. doi:10.1063/1.2926682 info:cnr-pdr/source/autori:Chen, P. (1); Di, Z.F. (2); Nastasi, M. (2); Bruno, E. (3); Grimaldi, M.G. (3); Theodore, N.D. (4); Lau, S.S. (1)/titolo:Effects of hydrogen implantation temperature on InP surface blistering/doi:10.1063%2F1.2926682/rivista:Applied physics letters/anno:2008/pagina_da:202107-1/pagina_a:202107-3/intervallo_pagine:202107-1–202107-3/volume:92 |
| DOI: | 10.1063/1.2926682 |
| Popis: | We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation. (C) 2008 American Institute of Physics. |
| Databáze: | OpenAIRE |
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