Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes
| Autor: | Akihiro Satake, Kenzo Fujiwara, T. Inada |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
business.industry
Chemistry Multiple quantum 78.55.Cr 78.67.De Atmospheric temperature range Electroluminescence Condensed Matter Physics 78.60.Fi law.invention 85.60.Jb law Physics::Space Physics Optoelectronics 73.50.Gr business Carrier capture Radiant intensity Intensity (heat transfer) Diode Light-emitting diode |
| Zdroj: | physica status solidi (c). 4(7):2768-2771 |
| ISSN: | 1610-1634 |
| Popis: | The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaN multiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED over a wide temperature range and as a function of injection current. It is found that the EL variation pattern with temperature and current is dramatically improved when the number of active wells increases as a result of enhanced carrier capture. The importance of vertical carrier capture processes is pointed out to explain the anomalous EL intensity variations at low temperatures. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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