Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
| Autor: | J.-F. Damlencourt, P. Brianceau, S. Bernasconi, D. Bensahel, T. Billon, N. Dechoux, C. Vallee, V. Benevent, J.C. Barbe, P. Rivallin |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science business.industry Metals and Alloys Silicon on insulator Nanotechnology 02 engineering and technology Surfaces and Interfaces Nitride 021001 nanoscience & nanotechnology Kinetic energy 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Induced stress Planar 0103 physical sciences Ultimate tensile strength Materials Chemistry Optoelectronics Wafer 0210 nano-technology business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2010, 518, pp.S92-S95 Thin Solid Films, 2010, 518, pp.S92-S95 |
| ISSN: | 0040-6090 |
| Popis: | We have studied the oxidation of embedded SiGe mesas on SOI in order to co-integrate planar high Ge enriched mesas and Si mesas in the same wafer. We show that oxidation of such structure by local Ge condensation technique leads to non-uniform areas close to mesa sidewalls. Because oxidation kinetic seems to be lowered at a certain point, and since oxidation kinetic is assumed to be stress-dependent, we propose to act on the different sources of strain to counterbalance the difference in oxidation kinetic. In one hand, strain induced by the growth of SiO 2 is removed by alternation of SiGe oxidation and SiO 2 removal during the whole process. On the other hand, the nitride oxidation mask is deposited with compressive or tensile intrinsic stress to study its influence on the induced strain in the SiGe mesa. We show that by choosing the right value of intrinsic stress in the nitride, uniform SiGe mesa with high Ge content could be achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect