Metal oxide multilayer hard mask system for 3D nanofabrication
| Autor: | Mikko Ritala, Emma Salmi, Marko Vehkamäki, Zhongmei Han, Markku Leskelä |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Ion beam business.industry Mechanical Engineering Bioengineering 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Focused ion beam Electrical contacts Atomic layer deposition Nanolithography Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science Electrical and Electronic Engineering Thin film 0210 nano-technology business Lithography Microfabrication |
| Zdroj: | Nanotechnology. 29(5) |
| ISSN: | 1361-6528 |
| Popis: | We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures. |
| Databáze: | OpenAIRE |
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