| Autor: |
Takanori Kiguchi, Akinori Higuchi, Naonori Sakamoto, Hisao Suzuki, Kazuo Shinozaki, Naoki Wakiya, Nobuyasu Mizutani |
| Jazyk: |
angličtina |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
Ferroelectrics. 370:132-139 |
| Popis: |
(001) oriented epitaxial Pt bottom electrode was prepared on Si(001) substrate using four fold buffer layer of ST/LSCO/CeO 2 /YSZ. On the epitaxial Pt bottom electrode, we found that both epitaxial and polycrystalline BST thin film can be prepared by the change of oxygen gas flow procedure during heating up to deposition temperature of BST. Without oxygen gas flow on the heating process of the Pt bottom electrode, BST thin film was changed into polycrystalline, on the other hand, when the Pt bottom electrode was heated in 100 mTorr of oxygen pressure, epitaxial grown BST thin film was realized. This means that the orientation of BST thin film can be controlled by the oxygen flow procedure during heating of the Pt bottom electrode. Dielectric constant and tunability of epitaxial BST thin film changed with the oxygen pressure during heating and deposition of BST thin film. This suggests that oxygen pressure during heating and deposition is the key to control the orientation and properties of BST thin film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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