Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology
| Autor: | Alessandro Salvucci, M. Vittori, Walter Ciccognani, Giorgio Polli, Ernesto Limiti, Ferdinando Costanzo, Sergio Colangeli |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Physics
business.industry Amplifier 020208 electrical & electronic engineering 020206 networking & telecommunications 02 engineering and technology Noise figure Settore ING-INF/01 - Elettronica 0202 electrical engineering electronic engineering information engineering Optoelectronics Ka band business Noise (radio) V band |
| Zdroj: | PRIME |
| Popis: | In this paper, two LNAs, designed to operate in Ka and V bands, and realized in a 70 nm GaAs/InGaAs technology, are presented. Both amplifiers have a 2-stage structure featured by source feedback and self-biasing networks to improve noise performance and to simplify the external circuitry, respectively. Total area occupation of the realized MMICs is 3x1.2 mm2 and 3x1 mm2. The Ka-band amplifier exhibits a noise figure lower than 1.5 dB over 27–31.5 GHz and a gain between 16 dB and 18 dB. The V-band LNA has a 1.7 dB noise figure in the 4751 GHz band, with an associated gain between 14.5 dB and 15.5 dB. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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