Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Autor:	Sangeeta Thakur, Luca Petaccia, Giovanni Di Santo, Daniel Hiller, Noël Wilck, Merlin Müller, Sean C. Smith, B. Berghoff, Dirk König, Joachim Mayer, Joachim Knoch
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Materials science Silicon impurity doping alternative General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Conductivity lcsh:Chemical technology 01 natural sciences lcsh:Technology Full Research Paper law.invention chemistry.chemical_compound law 0103 physical sciences wires and devices Miniaturization Nanotechnology General Materials Science lcsh:TP1-1185 Electrical and Electronic Engineering ultrasmall nanoscale silicon crystals 010306 general physics lcsh:Science Dopant business.industry lcsh:T Transistor Doping energy offset 021001 nanoscience & nanotechnology lcsh:QC1-999 Nanoscience Silicon nitride chemistry Quantum dot Optoelectronics lcsh:Q ddc:620 0210 nano-technology business lcsh:Physics
Zdroj:	Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2255-2264 (2018) Beilstein Journal of Nanotechnology Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
ISSN:	2190-4286
Popis:	Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210 Published by Beilstein-Institut zur Förderung der Chemischen Wissenschaften, Frankfurt, M.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca446c164ed1ea1ea7816f57fb62bb30 https://doaj.org/article/3bd003cc63f146c3a3bfcbbacadb1276 Zobrazit plný text záznamu