Surface-orientation-dependent growth of SrRuO3 epitaxial thin films
| Autor: | Sungmin Woo, Yunseok Kim, Wilfrid Prellier, Seunghun Kang, Woo Seok Choi, Hyun You Kim, Jegon Lee, A. David, Hyuk Choi |
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| Přispěvatelé: | Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Sungkyunkwan University [Suwon] (SKKU), Chungnam National University (CNU), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Physics and Astronomy SrRuO3 02 engineering and technology Substrate (electronics) Island growth 010402 general chemistry 01 natural sciences Crystallographic orientation Condensed Matter::Materials Science symbols.namesake Surface energy Growth kinetics [CHIM]Chemical Sciences Thin film ComputingMilieux_MISCELLANEOUS Kelvin probe force microscope [PHYS]Physics [physics] Surfaces and Interfaces General Chemistry [CHIM.MATE]Chemical Sciences/Material chemistry Pulsed laser epitaxy 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Gibbs free energy Chemical physics symbols sense organs Classical nucleation theory Crystallite 0210 nano-technology |
| Zdroj: | Applied Surface Science Applied Surface Science, 2020, 499, pp.143924. ⟨10.1016/j.apsusc.2019.143924⟩ Applied Surface Science, Elsevier, 2020, 499, pp.143924. ⟨10.1016/j.apsusc.2019.143924⟩ |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2019.143924⟩ |
| Popis: | International audience; The growth of epitaxial transition metal oxide thin films depends on various parameters including the substrate temperature, oxygen partial pressure, kinetics of incoming adatoms, Gibbs free energy, and surface energy. Naturally, the change in the crystallographic surface orientation with a distinctive surface energy also influences the growth rate and growth mode of the epitaxial thin films substantially. Using perovskite SrRuO3 as a model system, we studied the growth characteristics by changing the surface orientation of the SrTiO3 substrate. Employing X-ray diffraction and surface atomic and Kelvin probe force microscopy (KPFM), we observed a systematic decrease in the growth rate and a modification in the growth mode from a two-dimensional growth to a three-dimensional island growth with the change in the surface orientation from (100) to (110) to (111). A spin-polarized density functional theory calculation demonstrated the corresponding difference in the surface energy, which was also confirmed experimentally by the KPFM measurements. The difference in the surface energy could explain the observed change in the growth kinetics, based on the modified classical nucleation theory. A combinatorial method using a polycrystalline epitaxial thin film was employed to generalize our understanding of the crystallographic surface-orientation-dependent thin film growth. |
| Databáze: | OpenAIRE |
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