Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Autor:	D. Busse, Alain Dijkstra, Jens Renè Suckert, Claudia Rödl, M. A. J. V. Tilburg, V. T. V. Lange, Jos E. M. Haverkort, Marcel A. Verheijen, Jürgen Furthmüller, Silvana Botti, Erik P. A. M. Bakkers, Elham M. T. Fadaly, Friedhelm Bechstedt, Jonathan J. Finley
Přispěvatelé:	Advanced Nanomaterials & Devices, Plasma & Materials Processing, Center for Quantum Materials and Technology Eindhoven, Atomic scale processing, EIRES, Optics of hex-SiGe
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	Materials science Photoluminescence Silicon Condensed matter physics business.industry Condensed Matter::Other chemistry.chemical_element Physics::Optics 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Silicon-germanium 010309 optics chemistry.chemical_compound Condensed Matter::Materials Science Semiconductor chemistry 0103 physical sciences Direct and indirect band gaps Spontaneous emission 0210 nano-technology Translational symmetry business Recombination
Zdroj:	2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings
Popis:	Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational symmetry is broken.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca14ddf3f9482d4a76c85e2cebd4b332 https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf Zobrazit plný text záznamu