Semi-Transparent Perovskite Solar Cells with ITO Directly Sputtered on Spiro-OMeTAD for Tandem Applications
| Autor: | Alexander J. Bett, Ludmila Cojocaru, Martin Bivour, Martin Hermle, Jan Christoph Goldschmidt, Stefan W. Glunz, Patricia S. C. Schulze, Gerald Siefer, Leonard Tutsch, Kristina Winkler, Özde Ş. Kabakli |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy 0104 chemical sciences Chamber pressure law.invention chemistry Sputtering law Solar cell Optoelectronics General Materials Science 0210 nano-technology business Indium Sheet resistance Perovskite (structure) Transparent conducting film |
| Zdroj: | ACS Applied Materials & Interfaces. 11:45796-45804 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | Perovskite silicon tandem solar cells have the potential to overcome the efficiency limit of single-junction solar cells. For both monolithic and mechanically stacked tandem devices, a semi-transparent perovskite top solar cell, including a transparent contact, is required. Usually, this contact consists of a metal oxide buffer layer and a sputtered transparent conductive oxide. In this work, semi-transparent perovskite solar cells in the regular n-i-p structure are presented with tin-doped indium oxide (ITO) directly sputtered on the hole conducting material Spiro-OMeTAD. ITO process parameters such as sputter power, temperature, and pressure in the chamber are systematically varied. While a low temperature of 50 °C is crucial for good device performance, a low sputter power has only a slight effect, and an increased chamber pressure has no influence on device performance. For the 5 × 5 mm2 perovskite cell with a planar front side, a 105 nm thick ITO layer with a sheet resistance of 44 Ω sq-1 allowing for the omission of grid fingers and a MgF2 antireflection coating are used to improve transmission into the solar cells. The best device achieved an efficiency of 14.8%, which would result in 24.2% in a four-terminal tandem configuration. |
| Databáze: | OpenAIRE |
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