The Quantum Metal Ferroelectric Field-Effect Transistor
| Autor: | Paul M. Solomon, David J. Frank, Thomas N. Theis, Vijay Narayanan, Martin M. Frank, Catherine Dubourdieu |
|---|---|
| Přispěvatelé: | Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), European Organization for Nuclear Research (CERN) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Differential capacitance 02 engineering and technology 7. Clean energy 01 natural sciences Capacitance law.invention [SPI.MAT]Engineering Sciences [physics]/Materials Quantum capacitance [SPI]Engineering Sciences [physics] law 0103 physical sciences Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010302 applied physics business.industry Subthreshold conduction Transistor Electrical engineering 021001 nanoscience & nanotechnology Subthreshold slope Electronic Optical and Magnetic Materials Semiconductor [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics Field-effect transistor 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61, pp.2145. ⟨10.1109/TED.2014.2314652⟩ |
| ISSN: | 0018-9383 |
| Popis: | International audience; It has recently been suggested that ferroelectric (FE) negative capacitance effects can be used to achieve steep subthreshold slope field-effect transistors, which are greatly desired for reducing energy consumption in modern digital electronics. Here, we propose that this concept can be improved by the introduction of a very thin metal or metal-like layer (a quantum metal) between the FE and the semiconductor channel. We show how to design this layer so that it attenuates the polarization charge of the FE, applying an appropriate charge to the semiconductor, while at the same time presenting a relatively constant capacitance to the FE layer, as is needed to stabilize the negative capacitance regime. For homogeneous polarization, we estimate that this device (a QMFeFET) can have extremely steep subthreshold characteristics (2 mV/decade over 11 decades) and that its energy and delay performance are advantageous. |
| Databáze: | OpenAIRE |
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