Nitruration initiale par NH3 à basse température de Si(111) 1x1-H
| Autor: | J.E. Bonnet, C. Casado, J.P. Lacharme, C.A. Sébenne, M. Iqbal, N. Safta |
|---|---|
| Jazyk: | francouzština |
| Rok vydání: | 1994 |
| Předmět: |
Langmuir
Silicon Binding energy Analytical chemistry Dangling bond General Physics and Astronomy chemistry.chemical_element Photon energy 01 natural sciences Nitrogen Synchrotron 010305 fluids & plasmas law.invention chemistry law [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Atomic physics 010306 general physics Surface reconstruction |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C9), pp.C9-155-C9-158. ⟨10.1051/jp4:1994924⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1994924⟩ |
| Popis: | Silicon samples have been chemically treated in order to get a Si(111) 1 × 1: H surface under ultrahigh vacuum. This surface was exposed to doses of NH 3 in the 10 2 to 10 3 Langmuir range, either kept at room temperature or Joule-heated at 400° C. The Si 2p core level spectra were recorded upon synchrotron light beam excitation at a surface ― sensitive photon energy wavelength of 128 eV. The N 2s nitrogen peak binding energy at 20 eV was also recorded. While at room temperature the hydrogenated surface remained unperturbed whatever the dose of unexcited NH 3 , a reaction occurred as soon as the temperature reached about 400° C |
| Databáze: | OpenAIRE |
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