Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner
| Autor: | M.F. Beug, A.T. Tilke, R. Hoffmann, Malte Czernohorsky, L. Bach, D. A. Lohr, T. Melde, Roman Knoefler, U. Bewersdorff-Sarlette, Konrad Seidel, V. Beyer, Jan Paul |
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| Rok vydání: | 2009 |
| Předmět: |
010302 applied physics
Materials science medicine.diagnostic_test business.industry NAND gate 020206 networking & telecommunications Computed tomography 02 engineering and technology 01 natural sciences Encapsulation (networking) Non-volatile memory Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering medicine Optoelectronics Breakdown voltage business Aluminum oxide |
| Zdroj: | 2009 IEEE International Memory Workshop. |
| DOI: | 10.1109/imw.2009.5090595 |
| Popis: | This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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