SOI Pixel Sensor for Gamma-Ray Imaging
Autor: | Shimazoe, Kenji, Atiqah, Fairuz, Yoshihara, Yuri, Koyama, Akihiko, Takahashi, Hiroyuki, Orita, Tadashi, Kamada, Kei, Takeda, Ayaki, Tsuru, Takeshi, Arai, Yasuo |
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Rok vydání: | 2015 |
Předmět: |
Physics - Instrumentation and Detectors
Physics::Instrumentation and Detectors Computer Science::Computer Vision and Pattern Recognition Hardware_INTEGRATEDCIRCUITS ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION FOS: Physical sciences Hardware_PERFORMANCEANDRELIABILITY Instrumentation and Detectors (physics.ins-det) |
DOI: | 10.48550/arxiv.1507.06743 |
Popis: | SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also been developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons. Comment: "Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03." |
Databáze: | OpenAIRE |
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