Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Autor:	M. Gross, Han Zhou, A. Rühm, N. Y. Jin-Phillipp, Fritz Phillipp, H. Schröder
Rok vydání:	2001
Předmět:	Diffraction Threading dislocations Materials science Mechanical Engineering Nanotechnology Condensed Matter Physics Laser Molecular physics law.invention Mechanics of Materials law Transmission electron microscopy Sapphire General Materials Science Molecular beam epitaxy
Zdroj:	Journal of Materials Research. 16:261-267
ISSN:	2044-5326 0884-2914
DOI:	10.1557/jmr.2001.0039
Popis:	GaN grown on sapphire (α–Al2O3) was characterized by laser-induced molecular beam epitaxy. Threading dislocations with Burgers vectors of 1/3〈1120〉, 1/3〈1123〉 and [0001] were observed with a predominance of the first type. Additionally, inversion domains with Ga-polarity existed with respect to the adjacent matrix, which was of N-polarity. The dislocation densities and coherence lengths were deduced from x-ray diffraction and found to be in accordance with those measured by transmission electron microscopy. Both displacement fringe contrast analysis and high-resolution transmission electron microscopy results indicated that the inversion domain boundaries had Ga–N bonds between domains and the adjacent matrix.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c94bc3bf14a35b1c60adfe52b07e2367 https://doi.org/10.1557/jmr.2001.0039 Zobrazit plný text záznamu Full text from SpringerLink