Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
| Autor: | Filipp Mueller, Joost Ridderbos, Matthias Brauns, P. C. Spruijtenburg, W. G. van der Wiel, A. W. Leenstra, Antonius A.I. Aarnink, Floris A. Zwanenburg |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Physics
Range (particle radiation) Physics and Astronomy (miscellaneous) Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Intrinsic semiconductor Transistor FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences law.invention law Quantum dot 0103 physical sciences MOSFET Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 2023 OA procedure Coulomb 010306 general physics 0210 nano-technology Spectroscopy Quantum tunnelling |
| Zdroj: | Applied physics letters, 102(19). American Institute of Physics |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4804555 |
| Popis: | In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states. Comment: 4 pages, 4 figures. This article has been submitted to Applied Physics Letters |
| Databáze: | OpenAIRE |
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