Electrical model and characterization of Through Silicon Capacitors (TSC) in silicon interposer

Autor: Cedric Bermond, Thierry Lacrevaz, Grégory Houzet, Sylvain Joblot, Khadim Dieng, Yann Lamy, Bernard Flechet, Alexis Farcy, Philippe Artillan, Olivier Guiller
Přispěvatelé: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Projet Région Rhône-Alpes, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: 2014 International 3D Systems Integration Conference (3DIC)
2014 International 3D Systems Integration Conference (3DIC), Dec 2014, Kinsdale, Ireland. pp.1-8, ⟨10.1109/3DIC.2014.7152152⟩
3DIC
DOI: 10.1109/3DIC.2014.7152152⟩
Popis: International audience; Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed capacitors integrated throughout the silicon interposer. This paper deals with a demonstrator which investigates the first process steps of TSCs. A predictive modeling method of the impedance of large matrices of such components is proposed. The modeling method makes use of 2D/3D parasitic extraction software for the modeling of each parts of the structure. The resulting lumped RLCG parameters are used to generate a global equivalent circuit composed of segments of coupled distributed cells. The modeling method is validated by experimental results on the whole frequency range of use (up to 10 GHz). Such components demonstrate simultaneously high capacitance density (up to 23 nF/mm²), low parasitic equivalent series resistance and inductance and high serial resonance frequency (in GHz range for a capacitance value of 10 nF).
Databáze: OpenAIRE