Electrical model and characterization of Through Silicon Capacitors (TSC) in silicon interposer
Autor: | Cedric Bermond, Thierry Lacrevaz, Grégory Houzet, Sylvain Joblot, Khadim Dieng, Yann Lamy, Bernard Flechet, Alexis Farcy, Philippe Artillan, Olivier Guiller |
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Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Projet Région Rhône-Alpes, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: |
Materials science
Equivalent series resistance MIM capacitors 020208 electrical & electronic engineering 020206 networking & telecommunications 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY Filter capacitor Capacitance law.invention [SPI.TRON]Engineering Sciences [physics]/Electronics Capacitor [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism Film capacitor law Hardware_GENERAL 0202 electrical engineering electronic engineering information engineering Electronic engineering Hardware_INTEGRATEDCIRCUITS Equivalent circuit Parasitic extraction [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical impedance |
Zdroj: | 2014 International 3D Systems Integration Conference (3DIC) 2014 International 3D Systems Integration Conference (3DIC), Dec 2014, Kinsdale, Ireland. pp.1-8, ⟨10.1109/3DIC.2014.7152152⟩ 3DIC |
DOI: | 10.1109/3DIC.2014.7152152⟩ |
Popis: | International audience; Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed capacitors integrated throughout the silicon interposer. This paper deals with a demonstrator which investigates the first process steps of TSCs. A predictive modeling method of the impedance of large matrices of such components is proposed. The modeling method makes use of 2D/3D parasitic extraction software for the modeling of each parts of the structure. The resulting lumped RLCG parameters are used to generate a global equivalent circuit composed of segments of coupled distributed cells. The modeling method is validated by experimental results on the whole frequency range of use (up to 10 GHz). Such components demonstrate simultaneously high capacitance density (up to 23 nF/mm²), low parasitic equivalent series resistance and inductance and high serial resonance frequency (in GHz range for a capacitance value of 10 nF). |
Databáze: | OpenAIRE |
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