Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)
| Autor: | R. Alcotte, T. Baron, Y. Bogumilowicz, Pascal Pochet, Franck Bassani, R. Cipro, J. Moeyaert, J. B. Pin, Sylvain David, Errol Antonio C. Sanchez, X.Y. Bao, M. Martin, Damien Caliste, T. Cerba, Z. Ye |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Silicon
Materials science Physics and Astronomy (miscellaneous) Hydrogen Annealing (metallurgy) FOS: Physical sciences chemistry.chemical_element 02 engineering and technology 01 natural sciences Vacancy defect 0103 physical sciences Surface-Morphology Metalorganic vapour phase epitaxy Total pressure 010302 applied physics [PHYS]Physics [physics] Condensed Matter - Materials Science Antiphase Boundaries business.industry GaAs Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology CMOS chemistry Optoelectronics Density functional theory 0210 nano-technology business |
| Zdroj: | Applied Physics Letters Applied Physics Letters, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩ Applied Physics Letters, American Institute of Physics, 2016, 109 (25), pp.253103. ⟨10.1063/1.4972394⟩ |
| ISSN: | 0003-6951 |
| Popis: | The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300 mm MOCVD where the total pressure during the anneal step of Si(001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III-V integration on silicon industrial platform. Comment: 9 pages, 3 figures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|