Neutron-Induced Effects on a Self-Refresh DRAM

Autor: Manon Letiche, Alberto Bosio, Daniel Soderstrom, Lucas Matana Luza, Helmut Puchner, Ruben Garcia Alia, Luigi Dilillo, Carlo Cazzaniga
Přispěvatelé: TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), University of Jyväskylä (JYU), Infineon Technologies AG [München], European Organization for Nuclear Research (CERN), Institut Laue-Langevin (ILL), ILL, ​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​ISIS Neutron and Muon Source (ISIS), STFC Rutherford Appleton Laboratory (RAL), Science and Technology Facilities Council (STFC)-Science and Technology Facilities Council (STFC), École Centrale de Lyon (ECL), Université de Lyon
Jazyk: angličtina
Rok vydání: 2022
Předmět:
HyperRAM
Computer science
020209 energy
käyttömuistit
Self-Refresh
02 engineering and technology
Neutron
Fault (power engineering)
elektroniikkakomponentit
0202 electrical engineering
electronic engineering
information engineering
0601 history and archaeology
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Safety
Risk
Reliability and Quality
Simulation
hiukkassäteily
Block (data storage)
060102 archaeology
Event (computing)
stuck bits
neutronit
06 humanities and the arts
computer.file_format
Condensed Matter Physics
Self-refresh
Atomic and Molecular Physics
and Optics
SEE
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
[SPI.TRON]Engineering Sciences [physics]/Electronics
radiation
Identification (information)
DRAM
säteilyfysiikka
Stuck bits
Bitmap
Node (circuits)
[INFO.INFO-ES]Computer Science [cs]/Embedded Systems
computer
Dram
Dynamic testing
Zdroj: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2022, 128, pp.#114406. ⟨10.1016/j.microrel.2021.114406⟩
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2021.114406⟩
Popis: International audience; The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells’ retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post- irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.
Databáze: OpenAIRE
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