Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating
| Autor: | A. M. Alexeev, Tobias Bachmann, A. K. Ott, Chunmeng Dou, Evangelos Eleftheriou, Abu Sebastian, Federico Zipoli, Monica F. Craciun, Andrea C. Ferrari, C. David Wright, V. Karthik Nagareddy, V. P. Jonnalagadda, Alessandro Curioni, W.W. Koelmans |
|---|---|
| Přispěvatelé: | Ott, Anna [0000-0002-7652-7322], Ferrari, Andrea [0000-0003-0907-9993], Apollo - University of Cambridge Repository |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
02 engineering and technology Conductivity 01 natural sciences law.invention law Electric field 0103 physical sciences 4018 Nanotechnology Electrical and Electronic Engineering Ohmic contact 40 Engineering 010302 applied physics Dielectric strength business.industry Electrical engineering Nanosecond 021001 nanoscience & nanotechnology Computer Science Applications Amorphous solid Optoelectronics 7 Affordable and Clean Energy Resistor 0210 nano-technology business Joule heating |
| DOI: | 10.17863/cam.34232 |
| Popis: | © 2002-2012 IEEE. Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp 2 and sp 3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behavior at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|