Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions
| Autor: | Meng-Hsi Chuang, Chun-An Chen, Jenn-Ming Wu, Kuan-Hua Huang, Xin-Quan Zhang, Kuan-Chang Chiu, Ying-Yu Lai, Yi-Hsien Lee, Erh-chen Lin |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Mechanical Engineering Second-harmonic generation Heterojunction 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences In plane symbols.namesake Transition metal Mechanics of Materials Chemical physics Monolayer symbols General Materials Science Thermal stability van der Waals force 0210 nano-technology |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.). 30(7) |
| ISSN: | 1521-4095 |
| Popis: | Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than two monolayer TMDs are intriguing for exploring new physics and materials properties. Obtaining in-plane heterojunctions of monolayer TMDs with atomically sharp interfaces is very significant for fundamental research and applications. Currently, multistep synthesis for more than two monolayer TMDs remains a challenge because decomposition or compositional alloying is thermodynamically favored at the high growth temperature. Here, a multistep chemical vapor deposition (CVD) synthesis of the in-plane multijunctions of monolayer TMDs is presented. A low growth temperature synthesis is developed to avoid compositional fluctuations of as-grown TMDs, defects formations, and interfacial alloying for high heterointerface quality and thermal stability of monolayer TMDs. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of in-plane artificial lattices of the WS2 /WSe2 /MoS2 at reduced growth temperatures. Growth behaviors as well as the heterointerface quality are carefully studied in varying growth parameters. Highly oriented strain patterns are found in the second harmonic generation imaging of the TMD multijunctions, suggesting that the in-plane heteroepitaxial growth may induce distortion for unique material symmetry. |
| Databáze: | OpenAIRE |
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