Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
| Autor: | Dan Ritter, Kamira Weinfeld, Moshe Eizenberg, Ekaterina Zoubenko, Felix Palumbo, Xianbin Xu, Santiago Boyeras, Igor Krylov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Ciencias Físicas chemistry.chemical_element HK 02 engineering and technology 01 natural sciences chemistry.chemical_compound Atomic layer deposition 0103 physical sciences Thin film 010302 applied physics Surfaces and Interfaces Reliability 021001 nanoscience & nanotechnology Condensed Matter Physics Titanium nitride Surfaces Coatings and Films chemistry Chemical engineering ALD 0210 nano-technology Tin Carbon Deposition (chemistry) CIENCIAS NATURALES Y EXACTAS Stoichiometry Física de los Materiales Condensados Titanium |
| Zdroj: | Journal of Vacuum Science & Technology A. 36:06A105 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5057761 |
| Popis: | The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlyi... |
| Databáze: | OpenAIRE |
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