Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters
| Autor: | Yvan Avenas, Pierre-Olivier Jeannin, Laurent Dupont |
|---|---|
| Přispěvatelé: | Garcia, Sylvie, Laboratoire des Technologies Nouvelles (IFSTTAR/LTN), Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR), Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Technologies Nouvelles (IFSTTAR/COSYS/LTN) |
| Rok vydání: | 2013 |
| Předmět: |
MODULE
THERMO-SENSITIVE ELECTRICAL PARAMETERS Materials science ELECTRONIQUE Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology IGBT 01 natural sciences Temperature measurement Industrial and Manufacturing Engineering Computer Science::Hardware Architecture Saturation current 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Emissivity MESURE SEMICONDUCTEUR Electrical and Electronic Engineering TEMPERATURE ComputingMilieux_MISCELLANEOUS 010302 applied physics business.industry [SPI.NRJ]Engineering Sciences [physics]/Electric power 020208 electrical & electronic engineering INFRARED Insulated-gate bipolar transistor Chip THERMOGRAPHIE INFRAROUGE [SPI.TRON]Engineering Sciences [physics]/Electronics RAYONNEMENT INFRAROUGE Current injection technique Control and Systems Engineering Power module Optoelectronics Junction temperature business [SPI.NRJ] Engineering Sciences [physics]/Electric power Voltage |
| Zdroj: | APEC 2012-IEEE Applied Power Electronics Conference and Exposition APEC 2012-IEEE Applied Power Electronics Conference and Exposition, Feb 2012, Orlando, United States. p. 182-189, ⟨10.1109/APEC.2012.6165817⟩ IEEE Transactions on Industry Applications IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2013, 49 (4), pp.1599-1608 IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2013, 49 (4), pp. 1599-1608. ⟨10.1109/TIA.2013.2255852⟩ Applied Power Electronics Conference and Exposition APEC 2012 Applied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States. p 182 à 189 |
| ISSN: | 1939-9367 0093-9994 |
| DOI: | 10.1109/tia.2013.2255852 |
| Popis: | APEC 2012 - IEEE Applied Power Electronics Conference and Exposition, Orlando, ETATS-UNIS, 05-/02/2012 - 07/02/2012; The measurement of the junction temperature with thermo-sensitive electrical parameters (TSEPs) is largely used by electrical engineers or researchers but the obtained temperature value is generally not verified by any referential information of the actual chip temperature distribution. In this paper, we propose to use infrared (IR) measurements in order to evaluate the relevance of three commonly used TSEP with IGBT chips: the saturation voltage under a low current, the gateemitter voltage and the saturation current. The IR measurements are presented in details with an estimation of the emissivity of the black paint deposited on the power module. The temperatures obtained with IR measurement and with the different TSEPs are then compared in two cases: the use of only one chip and the use of two paralleled chips. |
| Databáze: | OpenAIRE |
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