Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
| Autor: | Kalon Gopinadhan, Rui Guo, Zhen Huang, Weiming Lü, Zhiqi Liu, Kun Han, Changjian Li, W. X. Zhou, Ariando, Shengwei Zeng, Thirumalai Venkatesan, L. K. Jian, H. J. Harsan Ma |
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| Rok vydání: | 2016 |
| Předmět: |
Electron mobility
Strongly Correlated Electrons (cond-mat.str-el) Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Chemistry General Engineering Induced high electron mobility transistor FOS: Physical sciences General Physics and Astronomy Ionic bonding Quantum oscillations Field effect 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter - Strongly Correlated Electrons Electric field Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences General Materials Science Charge carrier 010306 general physics 0210 nano-technology |
| Zdroj: | ACS Nano. 10:4532-4537 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.6b00409 |
| Popis: | Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect. 22 pages, 4 figures, ACS Nano, March 09, 2016 |
| Databáze: | OpenAIRE |
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