A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures
| Autor: | Manuel Hinojosa, Juan Jiménez, Oscar Martínez, Shabnam Dadgostar, Cantia Belloso Casuso, Iván García |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Solid-state physics Cathodoluminescence 02 engineering and technology Células fotovoltaicas multiunión Optoelectronic devices 01 natural sciences law.invention law 0103 physical sciences Solar cell Materials Chemistry Multijunction solar cells Electrical and Electronic Engineering Diffusion (business) computer.programming_language Dispositivos optoelectrónicos 010302 applied physics business.industry Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Scratch Optoelectronics Catodoluminiscencia 0210 nano-technology business computer Intensity (heat transfer) |
| Zdroj: | UVaDOC. Repositorio Documental de la Universidad de Valladolid instname |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-020-08176-w |
| Popis: | Producción Científica The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the intersection between a thin metallic mask and the semiconductor; a second approach consists of the measurement of the intensity profile around an intentional scratch on the surface of the sample. A longer diffusion length is measured when using the metallic mask as compared with the scratch. We discuss the role of non-radiative recombination centers in the reduction of the diffusion length around the scratch. The temperature dependence of the diffusion length is also measured, and the length is found to decrease with temperature. Junta de Castilla y León (project VA283P18) Ministerio de Economía, Industria y Competitividad (project ENE2017- 89561-C4-3-R) |
| Databáze: | OpenAIRE |
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