Electrical Characteristics of a Reduced-Gate Structure Polycrystalline Silicon Thin Film Transistor Using Field-Aided Lateral Crystallization

Autor:	Duck-Kyun Choi, Kwang Jin Lee, Young-Bae Kim, Jung Sun You
Rok vydání:	2010
Předmět:	Polycrystalline silicon Materials science Field (physics) law business.industry Thin-film transistor engineering Nanocrystalline silicon Optoelectronics Crystallization engineering.material business law.invention
Zdroj:	ECS Transactions. 33:173-181
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3481234
Popis:	In order to reduce the leakage current in n-channel polycrystalline silicon thin film transistors processed by field-aided lateral crystallization, we applied a reduced gate structure that enables an offset region between the channel and source-drain. The structure in this study was much simpler than those of other methods in the sense that it could accomplish both offset-gate and Ni-offset effects simultaneously without employing any additional masks or processes. The leakage current decreased as the offset region length ΔL per side increased. When ΔL = 2 μm, which corresponded to 10 percent of the total channel length of L = 20 μm, the off-state leakage current decreased to 3.2 pA/μm at VD = 0.1 V and VG = -10 V, which is more than two orders of magnitude lower than that in the conventional structure. In addition to a reduction in leakage current, other device parameters did not change significantly.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c818f974e401e84054838ba6bd8171e4 https://doi.org/10.1149/1.3481234 Zobrazit plný text záznamu