XRD investigation of the relaxation of InAsP layers grown by CBE on (100) InP

Autor:	T. Marschner, JH Joachim Wolter, H Vonk, M.R. Leys
Přispěvatelé:	Physics of Nanostructures, Photonics and Semiconductor Nanophysics
Rok vydání:	1998
Předmět:	Diffraction Materials science Condensed matter physics X-ray crystallography Relaxation (physics) Substrate (electronics) Condensed Matter Physics Layer thickness Atomic and Molecular Physics and Optics Chemical beam epitaxy Electronic Optical and Magnetic Materials
Zdroj:	Physica E: Low-Dimensional Systems & Nanostructures, 2(1-4), 873-877. Elsevier
ISSN:	1386-9477
DOI:	10.1016/s1386-9477(98)00178-7
Popis:	We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentration y As increases drastically and stays constant if the relaxation degree is further increased. The increase in y As with beginning relaxation does not depend on the substrate off-orientation, although y As decreases with increasing off-orientation for pseudomorphic structures. XRD measurements on (partly) relaxed samples show different relaxation degrees in [0 1 1] and [0 1 1] directions. The dependence of the asymmetry of the relaxation in different directions on the substrate off-orientation and the layer thickness is discussed with respect to the influence of surface steps on the generation of misfit dislocations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7ce522d5bcb37fa9be69984d856ba29 https://doi.org/10.1016/s1386-9477(98)00178-7 Zobrazit plný text záznamu Full Text from ScienceDirect